ndtset 1 #Optimization of acell, rprim optcell 2 #BFGS scheme ionmov 2 ntime 10 dilatmx 1.20 ecutsm 0.5 prtgeo 1 #Definition of the k-point grids kptopt 1 # Option for the automatic generation of k points, taking # into account the symmetry nshiftk 4 shiftk 0.5 0.5 0.5 # These shifts will be the same for all grids 0.5 0.0 0.0 0.0 0.5 0.0 0.0 0.0 0.5 ngkpt1 4 4 4 getwfk -1 # This is to speed up the calculation, by restarting # from previous wavefunctions, transferred from the old # to the new k-points. ecut 15.0 # Maximal kinetic energy cut-off, in Hartree #Definition of the SCF procedure nstep 10 # Maximal number of SCF cycles toldfe 1.0d-6 # Will stop when, twice in a row, the difference # between two consecutive evaluations of total energy # differ by less than toldfe (in Hartree) diemac 12.0 # Although this is not mandatory, it is worth to # precondition the SCF cycle. The model dielectric # function used as the standard preconditioner # is described in the "dielng" input variable section. # Here, we follow the prescription for bulk silicon. ntypat 1 # There is only one type of atom znucl 6 # Carbon #Definition of the unit cell acell 3*1.0 angstrom rprim 7.5117310187 -4.3368999257 0.0000000000 0.0000000000 8.6915984379 0.0000000000 0.0000000000 0.0000000000 4.2134161359 #Definition of the atoms natom 20 # There are two atoms typat 20*1 # They both are of type 1, that is, Silicon. xangst # This keyword indicate that the location of the atoms # will follow, one triplet of number for each atom 1.58119 1.14880 2.12700 0.60396 1.85880 1.41800 0.60396 1.85880 0.00000 -0.60396 1.85880 -0.70900 -0.60396 1.85880 2.12700 -1.58119 1.14880 1.41800 -1.58119 1.14880 0.00000 -1.95446 0.00000 -0.70900 -1.95446 0.00000 2.12700 -1.58119 -1.14880 1.41800 -1.58119 -1.14880 0.00000 -0.60396 -1.85880 -0.70900 -0.60396 -1.85880 2.12700 0.60396 -1.85880 1.41800 0.60396 -1.85880 0.00000 1.58119 -1.14880 -0.70900 1.58119 -1.14880 2.12700 1.95446 -0.00000 1.41800 1.95446 -0.00000 0.00000 1.58119 1.14880 -0.70900