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Re: [abinit-forum] chi0 and epsilonm1 not hermitian in abinit 5.1.2


Chronological Thread 
  • From: Fabien Bruneval <fabien.bruneval@polytechnique.fr>
  • To: forum@abinit.org
  • Subject: Re: [abinit-forum] chi0 and epsilonm1 not hermitian in abinit 5.1.2
  • Date: Wed, 31 May 2006 11:33:15 +0200

Hi!

You are perfectly right: the small imaginary part in the denominator for chi0 was added to avoid divergences when calculating chi0 for real frequencies.
Since the poles of chi0 are located along the real axis, this is true that you can set the hardcoded variable etadelta to 0, when you calculate chi0 for imaginary frequencies (as it is the case in the plasmon-pole models).

This small imaginary part is necessary for the calculation without plasmon-pole model. But furthermore, I thought this was completely harmless for the calculations with plasmon-pole model, as the built-in tests of abinit were all passed successfully by the new code 5.1.x.

Please tell me if you have other questions regarding the new implementation.


Fabien




dylu@ucdavis.edu wrote:
Hello, I did some tests on the dielectric matrix calculation of bulk silicon recently, and found that the results from Abinit 5.1.2 and Abinit 4.6.5 are not consistent. Taking the results from lesson 1 of the GW tutorial for example,
chi0 and epsilon^-1 computed from Abinit 5.1.2 are not Hermitian, while those
from Abinit 4.6.5 are (input file attached below).

The disagreement comes from i*eta introduced in the denominator of chi0 as a
broadening factor in routines cchi0.F90 and cchi0q0.F90 of abinit 5.1.2. In
the code, etadelta=0.1 eV contributing an imaginary part of -0.002 for
diagonal matrix elements of epsilon^-1(G,G',q=0,omega=0). Typical changes in
other elements are
in the order of 0.001.

I assume "etadelta" may relate to the new implemented plasmon-pole models or
non-plasmon-pole model in the higher version. Is there any other considerations?
Is it all right to simply not using "etadelta" at all in calculating
epsilon^-1 with abinit 5.1.2? I could actually reproduce the results in 4.6.5 by seting
etadelta=0.

Thanks
Deyu Lu

Below is my input:
ndtset 2

# Definition of parameters for the calculation of the KSS file
nbandkss1 -1 # Number of bands in KSS file (-1 means the maximum
possible)
nband1 9 # Number of (occ and empty) bands to be computed
istwfk1 10*1

# Calculation of the screening (epsilon^-1 matrix)
optdriver2 3 # Screening calculation
getkss2 -1 # Obtain KSS file from previous dataset
nband2 17 # Bands to be used in the screening calculation
ecutwfn2 2.1 # Cut-off energy of the planewave set to represent the
wavefunctions
ecuteps2 3.6 # Cut-off energy of the planewave set to represent the
dielectric matrix
ppmfrq2 16.7 eV # Imaginary frequency where to calculate the screening

# Data common to the three different datasets

# Definition of the unit cell: fcc
acell 3*10.217 # This is equivalent to 10.217 10.217 10.217
rprim 0.0 0.5 0.5 # FCC primitive vectors (to be scaled by acell)
0.5 0.0 0.5
0.5 0.5 0.0

# Definition of the atom types
ntypat 1 # There is only one type of atom
znucl 14 # The keyword "znucl" refers to the atomic number of the
# possible type(s) of atom. The pseudopotential(s)
# mentioned in the "files" file must correspond
# to the type(s) of atom. Here, the only type is Silicon.

# Definition of the atoms
natom 2 # There are two atoms
typat 1 1 # They both are of type 1, that is, Silicon.
xred # Reduced coordinate of atoms
0.0 0.0 0.0
0.25 0.25 0.25


# Definition of the k-point grid
kptopt 1 # Option for the automatic generation of k points,
nkpt 10
ngkpt 4 4 4
nshiftk 4
shiftk 0.5 0.5 0.5 # These shifts will be the same for all grids
0.5 0.0 0.0
0.0 0.5 0.0
0.0 0.0 0.5

# Use only symmorphic operations
symmorphi 0

# Definition of the planewave basis set (at convergence 16 Rydberg 8 Hartree)
ecut 8.0 # Maximal kinetic energy cut-off, in Hartree

# Definition of the SCF procedure
nstep 10 # Maximal number of SCF cycles
toldfe 1.0d-6 # Will stop when this tolerance is achieved on total energy
diemac 12.0 # Although this is not mandatory, it is worth to
# precondition the SCF cycle. The model dielectric
# function used as the standard preconditioner
# is described in the "dielng" input variable section.
# Here, we follow the prescription for bulk silicon.





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