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[pengyoucool@yahoo.com.cn]

Dear users,
    Thank you for your attention.
    I have calculated the band of my compound with full potential in LAPW 
method.It is a semiconductor,not metallic. I think there should not be
any difference between full potential method and the pseudo potential method 
about the special k points in the gap.So I work with GW correction in the gap 
directly. If I'm wrong ,any comments will be appreciated.
    What'more,I don't know how the two parameters "occopt" and "tsmear" work 
for their purposes.I didn't find out any informations about them in the input 
file tgw_1.in.
    Appreciate your help in advance.

                                                                              
                                                                              
                                 yours,
                                                                  Peng