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Re: The errro of E_g for Si is so big betweeen the computational and experimental results.


Chronological Thread 
  • From: paul.boulanger@umontreal.ca
  • To: forum@abinit.org
  • Subject: Re: The errro of E_g for Si is so big betweeen the computational and experimental results.
  • Date: Sun, 15 Apr 2007 11:43:02 +0200

Hi,

this is the result of the band gap underestimation of the LDA (or GGA)
approximation to the exchange-correlation energy. It is well documented and
is a recognized flaw of the Kohn-Sham formalism. After all, the Kohn-Sham
band structure is not really the physical one particle band structure. To
correct the band gap, one needs to apply GW corrections (which can be done
with Abinit, see tutorial:
http://www.abinit.org/Infos_v5.2/tutorial/lesson_gw.html).

If you want to further your comprehension of the different formalisms used in
modern Ab Initio calculations, I strongly recommend Richard Martin's book:

Electronic Structure: Basic Theory and Practical Methods
Cambridge University Press, New York, 2004
ISBN 0 521 78285 6

A final note, you should always compare the results of youre calculation to
0K experimental results since all calculations (maybe not if your use some
electronic temperature) are done at this temperature. In your case, you
should compare to a band gap of 1.17 eV for Si, not 1.12 eV.

Paul



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