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Re: [abinit-forum] electron phonon analysis of a semiconductor


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  • From: Matthieu Verstraete <mjv500@york.ac.uk>
  • To: forum@abinit.org
  • Subject: Re: [abinit-forum] electron phonon analysis of a semiconductor
  • Date: Mon, 18 Feb 2008 15:11:13 +0000 (GMT)


Hello again -

I think you mean the occupation number from previous run at some high
electron temperature? The Fermi function will have to be modified for
a change in the chemical potential (fermi level) which is a function
of electron temperature. Is it taken into account in the code?

If the ground state is done with occopt 3 and a given temperature, fine - the states and potential should be good. However in the elphon code the FS integration is then done with a gaussian smearing around the (correct) E_F. What you could add is a FD smearing around E_F instead of the Gaussian - I think this would be more physical. The right way to go would be to return to T dependent equations, and I believe a f_nk(1-f_nk) comes out, which is just the FD smearing function up to a factor. To be checked, but this could indeed be read in from the GS run (in that case you impose the elphon smearing width to be the GS T, which is fine but not flexible if you want to change the width in elphon).

The trouble with the Gaussian is that it gives quite a different shape (exp(-e^2) decay instead of exp(-e)) and it's not easy to find an equivalent width of Gaussian to reproduce the FD effects.


Matthieu



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