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- From: Zeila Zanolli <zanolli@pcpm.ucl.ac.be>
- To: forum@abinit.org
- Subject: Re: [abinit-forum] InAs GW correction.
- Date: Sun, 30 Mar 2008 20:01:36 +0200
Dear Wang, In the study of InAs there are, indeed, problems in getting the correct occupation of the valence/conduction states at the LDA level of the calculation. Then, if the LDA occupations are too far from what they should be, the GW calculation cannot do that much, and this is why even the GW calculated gap is far from what it should be. The problem in InAs are mostly due to the "d" electronic states of In. You can find more info on this topic in the paper PhysRevB vol 75 (2007) 245121 "Model GW band structure of InAs and GaAs in the wurtzite phase" where results for InAs zincblende are reported as well. By the way, which pseudopotential are you using? Are you including the 'semicore' states? The best would be to use a pseudo for In that includes the 4d, 4s and 4p among the valence electrons... Another thing, which is the LDA gap you find when using the metallic occupation? All the best, Zeila On 30 Mar 2008, at 19:26, wxw079000@utdallas.edu wrote:
--------------------------------------------------------------------------------------------- Dr. Zeila Zanolli Université Catholique de Louvain (UCL) Unité Physico-Chimie et de Physique des Matériaux (PCPM) Place Croix du Sud, 1 (Boltzmann) B-1348 Louvain-la-Neuve, Belgium Phone: +32 (0)10 47 3501 Mobile: +32 (0)487 556699 Fax: +32 (0)10 47 3452 e-mail: zeila.zanolli@uclouvain.be --------------------------------------------------------------------------------------------- |
- InAs GW correction., wxw079000, 03/30/2008
- Re: [abinit-forum] InAs GW correction., Zeila Zanolli, 03/30/2008
- Re: [abinit-forum] InAs GW correction., ธนูสิทธิ์ บุรินทร์ประโคน, 03/31/2008
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