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Re: Re : [abinit-forum] nband value and occopt


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  • From: Xavier Gonze <xavier.gonze@uclouvain.be>
  • To: forum@abinit.org
  • Subject: Re: Re : [abinit-forum] nband value and occopt
  • Date: Fri, 6 Mar 2009 18:20:30 +0100
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Dear Soraya and Pierre-Matthieu

Well, for non-magnetic insulators, strictly speaking,
nband= ne/2
will work already. And there are many examples of this in the
input files provided with ABINIT.
The goal of adding a few unoccupied bands is only to monitor whether
the system is actually metallic or insulating ! And sometimes,
by adding some unoccupied bands you can get a faster convergence,
but this is not always the case.

For metallic systems, nband= ne/2 will definitely not be enough.

Soraya : in general, there is no need to define nband by hand,
there are default values in ABINIT that usually work quite well,
except perhaps for some response function calculations (phonons).

Xavier


On 06 Mar 2009, at 18:06, Anglade Pierre-Matthieu wrote:

On Fri, Mar 6, 2009 at 5:49 PM, Souraya Goumri-Said
<Souraya.Goumri-Said@fundp.ac.be> wrote:
Dear PMA,

Thank's very much for you detailed explanation

I still have some confusion <:-| :

Suppose we have a system of 8 atoms (A, B and C) , and we have 4 A atoms, 3
B atoms and 1 C atom

following your explanation: the valence electron : ne = 4 x ZION(A) + 3 x
ZION(B)+ ZION(C) ( ZION extracted from PSPNC files) ( is it correct ?)

which expression is correct : nband = 1/2 [ ne+2 ] or nband= ne/2 +2

nband= ne/2 +2 (at least)



occopt=1 is it the best choice or can be equal =< 3 for SC

have a look at :
http://www.abinit.org/Infos_v5.5/input_variables/varbas.html#occopt
You will see that using occopt = {1, 3, 4, 5, 6, 7}
is easy while other options are used in very special cases.
For a semiconductor it is natural to use occopt 1 yet any of the
choice above will work as well.




Best regards,

Souraya,





At 09:18 6/03/2009, you wrote:

For basic ground state calculation in semiconductors, nband is to be
chosen has, at least, half the number of electrons (ne) within the
cell + 2. The number of electrons within the cell is the sum of all
the valence electron of the atoms in the cell. The number of valence
electrons of an atom is written in the pseudopotential file you use
for this species. If you have a look at Abinit pseudopotentials, they
contain a variable zion. This is the number of valence electron of the
atom.

A DFT calculation consist in writting an hamiltonian (made from your
atomic positions, pseudopotential, cell size, cutoff energy, exchange
correlation energy) and getting the eigenvalue (energy) associated
with each band (at convergence the bands are eigenvectors of your
hamiltonian). When solving the problem one seeks only the lowest
eigenvalues and associated eigenvectors since electrons are going to
occupate only the lowest energy levels. For semiconductors, the
occupied bands (vlaence) are separated from the unoccupied one
(conduction) by a gap. Therefore, all the valence bands are totally
occupied and all the conduction bands are totally empty ; then the
laters make no contribution to the total energy and it is not usueful
from a physical point of view to calculate them. Nevertheless
including a few conduction bands helps solving the hamiltonian and
that's why I recommended you to use at least nband = ne/2 +2 for a
semiconductor. That's a minimum. For safety, if you don't understand
very well, you'd better use nband = ne/1.5.

In metals things are a little more complicated. Since conduction bands
and valence bands are very close, temperature can spread the electrons
over the fermi level. Moreover getting an accurate evaluation of the
total energy is more difficult and can be made easier by using a high
temperature for the electrons. Depending on the way you want to deal
with those two facts you can choose with occopt a distribution for
your population of electrons whose parameter is the electronic
temperature (tsmear). Yet, if you actually deal with semiconductors
you can safely choose occopt 1.

regards

PMA



On Thu, Mar 5, 2009 at 7:42 PM, lagoun brahim <lag17_brahim@yahoo.fr> wrote:
HI
i am not a devloper then if i am wrong someone should correct me
we need a convergence study for ecution in the case of metals, but for
insulator was not need that,
OCCUP x 2 =the number of valence electrons in your pseudopotentiel (in the
cell)


--- En date de : Jeu 5.3.09, Souraya Goumri-Said
<Souraya.Goumri-Said@fundp.ac.be> a écrit :

De: Souraya Goumri-Said <Souraya.Goumri-Said@fundp.ac.be>
Objet: [abinit-forum] nband value and occopt
À: forum@abinit.org
Date: Jeudi 5 Mars 2009, 17h56

Dear Abinitors,

I have some problem to understand the "choice" of the nband and occopt
value
? By reading the input variables for nband and occopt, I don't know how
can
I attribute the values of these input essentially for an insulator (
semiconductors) ?

Can someone explain to me how to know in adavance these values ?

Regards,



Cordialement,
Sincerely yours,

====================================
Dr. Souraya Goumri-Said
Centre de recherche en Physique de la Matière et du Rayonnement (PMR)
Laboratoire de Physique du Solide
Facultés Universitaires Notre-Dame de la Paix
Rue de Bruxelles 61 - B - 5000 Namur
Tel : +32(0)81 72 47 01
Fax : +32(0)81 72 47 10
http://sourayagoumri-said.weebly.com/
email : Souraya.Goumri-Said@fundp.ac.be





--
Pierre-Matthieu Anglade

Cordialement,
Sincerely yours,

====================================
Dr. Souraya Goumri-Said
Centre de recherche en Physique de la Matière et du Rayonnement (PMR)
Laboratoire de Physique du Solide
Facultés Universitaires Notre-Dame de la Paix
Rue de Bruxelles 61 - B - 5000 Namur
Tel : +32(0)81 72 47 01
Fax : +32(0)81 72 47 10
http://sourayagoumri-said.weebly.com/
email : Souraya.Goumri-Said@fundp.ac.be




--
Pierre-Matthieu Anglade






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