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Re: [abinit-forum] Problem in GW calculation of GaAs


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  • From: BOTTIN Francois <francois.bottin@cea.fr>
  • To: forum@abinit.org
  • Subject: Re: [abinit-forum] Problem in GW calculation of GaAs
  • Date: Mon, 28 Sep 2009 09:54:07 +0200
  • Organization: CEA-DAM

Do you use Ga pseudopotential with semicore states?
Indeed, semicore effects, but also lack of numerical convergence, can be responsible for this difference.
See Tiago et al. PHYSICAL REVIEW B 69, 125212 (2004).
Best regards,
Francois

sankeerth rajalingam a écrit :

Dear ABINIT users,

I am a new ABINIT user. I am learning to do GW calculations to achieve correct bandgap. I have worked on basic tutorials and also band structures.
I have performed GW correction for GaAs bandstructure at the gamma point, in a way similar to the one specified in the tutorial, using Troullier-Martins pseudopotentials.

The output of the calculation, the corrected bandgap was 1.203 eV, which is significantly different from the following values:

1.58 eV, in Godby RW, Schluter M and Sham LJ, "Self-energy operators and exchange-correlation potentials in semiconductors", /Phys. Rev. B./ 37, 10159 (1988).

1.52eV (experimental value from TABLE 1), in Remediakis IN and Kaxiras E, “Band-structure calculations for semiconductors within generalized-density-functional theory”, /Phys. Rev. B./ 59, 5536 (1999).


Can someone please specify the reasons for the difference in the output, when compared to the value in the reference?

Also, please suggest me if I need to make any changes in the input file.




-------------------------INPUT FILE BEGINS---------------------------


The input file used for the calculation is shown below.

ndtset 4

shiftk2 0.0 0.0 0.0 # This grid contains the Gamma point
0.0 0.5 0.5
0.5 0.0 0.5
0.5 0.5 0.0
istwfk2 19*1 # Option needed for Gamma
iscf2 -2 # Non self-consistent calculation
getden2 -1 # Read previous density file
nband2 9
nbandkss2 100 # Number of bands to store in KSS file

# Dataset3: Calculation of the screening (epsilon^-1 matrix)
optdriver3 3 # Screening calculation
getkss3 -1 # Obtain KSS file from previous dataset
nband3 150 # Bands to be used in the screening calculation
ecutwfn3 5 # Planewaves to be used to represent the wavefunctions
ecuteps3 7 # Dimension of the screening matrix
ppmfrq3 16.7 eV # Imaginary frequency where to calculate the screening


# Dataset4: Calculation of the Self-Energy matrix elements (GW corrections)
optdriver4 4 # Self-Energy calculation
getkss4 -2 # Obtain KSS file from dataset 1
getscr4 -1 # Obtain SCR file from previous dataset
nband4 200 # Bands to be used in the Self-Energy calculation
ecutwfn4 6 # Planewaves to be used to represent the wavefunctions
ecutsigx4 7 # Dimension of the G sum in Sigma_x
# (the dimension in Sigma_c is controlled by npweps)
nkptgw4 1 # number of k-point where to calculate the GW correction
kptgw4 # k-points
0.000 0.000 0.000 # (Gamma)
bdgw4 4 5 # calculate GW corrections for bands from 4 to 5


# Definition of the unit cell: fcc
acell 3*10.683187931 # This is equivalent to 10.217 10.217 10.217
rprim 0.0 0.5 0.5 # FCC primitive vectors (to be scaled by acell)
0.5 0.0 0.5
0.5 0.5 0.0

# Definition of the atom types
ntypat 2 # There is only one type of atom
znucl 31 33 # The keyword "znucl" refers to the atomic number of the
# possible type(s) of atom. The pseudopotential(s)
# mentioned in the "files" file must correspond
# to the type(s) of atom. Here, the only type is Silicon.

# Definition of the atoms
natom 2 # There are two atoms
typat 1 2 # They both are of type 1, that is, Silicon.
xred # Reduced coordinate of atoms
0.0 0.0 0.0
0.25 0.25 0.25

# Definition of the planewave basis set (at convergence 16 Rydberg 8 Hartree)
ecut 8.0 # Maximal kinetic energy cut-off, in Hartree

# Use only symmorphic operations
symmorphi 0

# Definition of the SCF procedure
nstep 10 # Maximal number of SCF cycles
diemac 12.0 # Although this is not mandatory, it is worth to
# precondition the SCF cycle. The model dielectric
# function used as the standard preconditioner
# is described in the "dielng" input variable section.
# Here, we follow the prescription for bulk silicon.
tolwfr 1.0d-10

# This line added when defaults were changed (v5.3) to keep the previous, old behaviour
iscf 5

------------------------------INPUT FILE ENDS--------------------------



----------------------------OUTPUT FILE BEGINS-----------------------

The output of the calculation is shown below.

k = 0.000 0.000 0.000

Band E0 <VxcLDA> SigX SigC(E0) Z dSigC/dE Sig(E) E-E0 E
4 -0.428 -11.190 -12.443 0.749 0.771 -0.298 -11.578 -0.389 -0.816
5 0.216 -10.251 -7.238 -2.794 0.784 -0.275 -10.080 0.171 0.387

E^0_gap 0.643
E^GW_gap 1.203
DeltaE^GW_gap 0.560

--------------------------------OUTPUT FILE ENDS-------------------------



Thank you.

Regards,
Sankeerth Rajalingam
Graduate Research Assistant





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Francois Bottin tel: 01 69 26 41 73
CEA/DIF fax: 01 69 26 70 77
BP 12 Bruyeres-le-Chatel email: Francois.Bottin@cea.fr
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