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Re: [abinit-forum] Vacancies implementation in Al2O3


Chronological Thread 
  • From: Vincenzo Fiorentini <vincenzo.fiorentini@dsf.unica.it>
  • To: forum@abinit.org
  • Subject: Re: [abinit-forum] Vacancies implementation in Al2O3
  • Date: Thu, 16 Mar 2006 13:10:27 +0100
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there is a good paper on the topic:
Pinto et al., prb 70, 125402 (2004).
the cell is 40 atoms. I estimated a
diagonal dielectric constant (9,9,11).

V. Fiorentini


On 16 Mar 2006, at 11:48 AM, Pierre Boulenc wrote:

Dear Stephane,

How big is your supercell for gamma-Al2O3?
Starting with the cubic spinel unit cell (which has 16 * 83.33 % octahedral Al, 8 tetrahedral Al and 32 O atoms), you need at least 3 unit cells to have 8 vacancies in your whole supercell. That would bring you up to 160 atoms in your supercell.
I think that's quite a lot, and if you plan to calculate dielectric properties, you will need well-enough converged results which may take a huge time for such a number of atoms.

Regards,

Pierre


Stephane BECU a écrit :

Dear abinit users,

I try to build a supercell for calculating dielectric properties of gamma-Al2O3. I begin with an ideal spinel unit, typified by MgAl2O4. Then I do some modification of this ideal unit, one of it is to remove two Al atoms to create two vacancies. The thing is I do not know how to declare the vacancies:
--> do I have to count them like the other atoms in natom?
--> what type (typat) of atoms do I have to define?
--> how define their positions?

Thanks for your help,

Stéphane Bécu



--

Pierre Boulenc

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