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- From: dylu@ucdavis.edu
- To: forum@abinit.org
- Subject: question on static dielectric matrices of bulk silicon
- Date: Thu, 18 May 2006 20:10:21 +0200
Dear Abinit users:
I'm trying to reproduce the static dielectric matrices of bulk silicon
as in Ref. 1 with Abinit. The input file is listed at the bottom. After
several tests, my basic concern is about the accuracy. Following a similar
recipe in Ref. 1, I found that my computed macroscopic dielectric constant
(12.5708) and macroscopic dielectric constant without local field (14.0011)
are about 3% larger than the values reported in the reference (12.2) and
(13.61). For the diagonal matrix elements of epsilon_tilde^-1 (E^-1) , other
than near Gama point (q->0), the difference is about 20% for the heading
elements and even larger for other elements. The results are compared here:
E^-1_{0,0}(q->0) E^-1_{111,111}(q->0) E^-1_{0,0}(X)
current work 0.079549 0.596704 0.328162
Ref. 1 0.082 0.595 0.2749
EXP 0.085
E^-1_{11-1,11-1}(X) E^-1_{0,0}(L) E^-1_{-1-11,-1-11}(L)
current work 0.930791 0.333795 0.975889
Ref. 1 0.4138 0.2828 0.4822
The only reason I could imagine is the pseudopotential 14si.pspnc I
used, not the same as the one in Ref. 1 generated by the authors following
Kerker algorithm.
Could someone with more experiences give me some comments? Is a better
pseudopotential the only thing I need?
Thanks
Deyu Lu
****************************************************************************
Ref. 1: Ab initio static dielectric matrices from the density-functional
approach.
I. Formulation and application to semiconductors and insulators, M. Hybertsen
and S. Louie, PRB, 35:5585, 1987.
*****************************Input file *************************************
ndtset 2
# Definition of parameters for the calculation of the KSS file
nbandkss1 -1 # Number of bands in KSS file (-1 means the maximum
possible)
nband1 9 # Number of (occ and empty) bands to be computed
istwfk1 60*1
# Calculation of the screening (epsilon^-1 matrix)
optdriver2 3 # Screening calculation
getkss2 -1 # Obtain KSS file from previous dataset
nband2 72 # Bands to be used in the screening calculation
ecutwfn2 8.5 # Cut-off energy of the planewave set to represent the
wavefunctions
ecuteps2 8.5 # Cut-off energy of the planewave set to represent the
dielectric matrix
ppmfrq2 16.7 eV # Imaginary frequency where to calculate the screening
nqptdm2 3
qptdm2 0.000010 0.000020 0.000030
-0.500000 -0.500000 0.000000
0.500000 0.500000 0.500000
# Data common to the three different datasets
# Definition of the unit cell: fcc
acell 3*10.217 # This is equivalent to 10.217 10.217 10.217
rprim 0.0 0.5 0.5 # FCC primitive vectors (to be scaled by acell)
0.5 0.0 0.5
0.5 0.5 0.0
# Definition of the atom types
ntypat 1 # There is only one type of atom
znucl 14 # The keyword "znucl" refers to the atomic number of the
# possible type(s) of atom. The pseudopotential(s)
# mentioned in the "files" file must correspond
# to the type(s) of atom. Here, the only type is Silicon.
# Definition of the atoms
natom 2 # There are two atoms
typat 1 1 # They both are of type 1, that is, Silicon.
xred # Reduced coordinate of atoms
0.0 0.0 0.0
0.25 0.25 0.25
# Definition of the k-point grid
kptopt 1 # Option for the automatic generation of k points,
nkpt 60
ngkpt 8 8 8
nshiftk 4
shiftk 0.5 0.5 0.5 # These shifts will be the same for all grids
0.5 0.0 0.0
0.0 0.5 0.0
0.0 0.0 0.5
# Use only symmorphic operations
symmorphi 0
# Definition of the planewave basis set (at convergence 16 Rydberg 8 Hartree)
ecut 8.5 # Maximal kinetic energy cut-off, in Hartree
# Definition of the SCF procedure
nstep 10 # Maximal number of SCF cycles
toldfe 1.0d-6 # Will stop when this tolerance is achieved on total energy
diemac 12.0 # Although this is not mandatory, it is worth to
- question on static dielectric matrices of bulk silicon, dylu, 05/18/2006
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