The ABINIT Users Mailing List ( CLOSED )

[jacky even <jacky.even@insa-rennes.fr>]

Dear Everyone,

A postdoc position is opened in our laboratory for one year (2006/2007).
It could be also converted into a PhD position for two years (2006/2007
2007/2008) jointly directed in collaboration with another lab. Here you
can find a summary of the subject.
best regards;
J. Even
Professor, LENS/FOTON laboratory, UMR6082 CNRS,  INSA de Rennes,
France

Subject :
"Ab initio studies for the fundamental understanding of
semiconductor quantum dots properties"

LENS/FOTON laboratory is dedicated to the study of the growth and the
optoelectronic applications of semiconductor nanostructures on InP
substrate (
http://www.insa-rennes.fr/foton/
and refs below). 

The aim of the study is to obtain a deep understanding of mechanical and electronical properties either for the InAs/InP quantum dots already used in our laboratory or for nanostructures studied in our new research projects.  This study will be performed in the framework of the Sandie European Network of Excellence (https://www.uni-leipzig.de/~sandie/).

Candidates for the post-doc position must have a PhD in computational condensed matter physics 
or theoretical chemistry (experiences on abinit, siesta, matlab, linux softwares will be appreciated and a detailed curriculum vitae should be sent to jacky.even@insa-rennes.fr ). 
Candidates for the joint PhD position must be supported by another laboratory. Please contact jacky.even@insa-rennes.fr


References :
InAs/InP quantum dots :
C. Cornet, A. Schliwa, J. Even, F. Doré, C. Celebi, A. Létoublon, E. Macé, C. Paranthoën, A. Simon, P. M. Koenraad, N. Bertru, D. Bimberg and S. Loualiche, 
Theory of electronic and optical properties of InAs quantum dots on (100) and (311) InP substrates
Phys. Rev. B., in press (July 2006).
. C. Cornet, C. Platz, P. Caroff, J. Even, C. Labbe, H. Folliot, A. Le-Corre et S. Loualiche, 
Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots. 
Physical Review B : Condensed Matter and Materials Physics, 2005. 72(3): p. 35342.
C. Platz, C. Paranthoen, P. Caroff, N. Bertru, C. Labbe, J. Even, O. Dehaese, H. Folliot, A. Le-Corre, S. Loualiche, G. Moreau, J. C. Simon et A. Ramdane, 
Comparison of InAs quantum dot lasers emitting at 1.55 mu m under optical and electrical injection. 
Semiconductor Science and Technology, 2005. 20(5): p. 459-63.
New materials and new quantum dots :
. F. Doré, C. Cornet, A. Schliwa, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre et S. Loualiche, 
InAs(Sb)/InP(100) quantum dots for mid-infrared emitters : observation of 2.35 µm photoluminescence 
Physica status solidi(c), 2006. 3: p. 524.
 C. Cornet, F. Dore, A. Ballestar, J. Even, N. Bertru, A. Le-Corre et S. Loualiche, 
InAsSb/InP quantum dots for midwave infrared emitters: a theoretical study. 
Journal of Applied Physics, 2005. 98(12): p. 126105-1-3.
N. Chimot, J. Even, H. Folliot et S. Loualiche, 
Structural and electronic properties of BAs and BGaAs/BInAs alloys. 
Physica B : Condensed Matter, 2005. 364(1-4): p. 263-72.